This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Abstract: The purpose of this article is to consolidate the issues raised in debates on the binding effect of the arbitration clause to non-signatory parties that are members of groups of companies in accordance with the so-called group of companies doctrine under the Brazilian legal system. First, this article analyses the concept of arbitration agreements, as well as its validity requirements, especially the requirement of written form.